WebFGH40T65SQD-F155 #NONE #NA RUR1S1560S9A #NONE #NA FDMC8296 #NONE #NA FDMC2D8N025S #NONE #NA FDMA520PZ #NONE #NA. Product Discontinuance Document #:PD23933ZB Issue Date:08 Apr 2024 TEM001799 Rev. C Page 3 of 3 FDMS8880 #NONE #NA NTZD3158PT1G #NONE #NA FDMS1D4N03S … WebMar 15, 2024 · FGH40T65UPD onsemi / Fairchild IGBT Transistors 650 V 80 A 268 W datasheet, inventory, & pricing.
FGH40T65SQD Datasheet by ON Semiconductor Digi-Key …
WebUsing the novel field stop 4th generation high speed IGBT technology. AFGHL40T65SQD which is AEC Q101 qualified offers the optimum performance for both hard and soft … WebDiscrete IGBT Cross-Reference Search. Just type in the competitor’s name, partner number or package to search for a compatible Fuji Electric part. Search. Search in. Other Company Partner Number. Package. Manufacturer. Fuji Electric Part Number. Data Sheet. tower creator discord
IGBT - Field Stop, Trench - Onsemi
WebFGH40T65UQDF www.onsemi.com 4 ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit VFM Diode Forward Voltage IF = 20 A TC = 25°C − 1.5 1.95 V TC = 175°C − 1.39 − Erec Reverse Recovery Energy IF J= 20 A, dIF/dt = 200 A/ s TC = 175°C − 115 − Trr Diode … WebFGH40T65SQD www. onsemi.com 2 ABSOLUTE MAXIMUM RATINGS Symbol Description FGH40T65SQD ï F155 Unit V CES Collector to Emitter Voltage 650 V V GES Gate to Emitter Voltage ±20 V Transient Gate to Emitter Voltage ±30 V IC Collector Current TC = 25°C 80 A TC = 100°C 40 A ILM (Note 1) Pulsed Collector Current TC = 25°C 160 A … WebFGH40T65SQD Inventory Results. Datasheet. Cross Reference. RoHS Compliant. Non-RoHS-Compliant. Part Number Manufacturer Quantity Price Availability Order Request Quote; FGH40T65SQD. ON. 88. Requires Quote Available FGH40T65SQD-F155. On-semiconductor. 1239. Requires Quote tower cream toaster